Surface modification using functional carbon nanotubes

ABSTRACT

Techniques for CNT solubilization and surface-selective deposition via polymer-mediated assembly are provided. In one aspect, a method for self-assembly of CNTs on a substrate is provided. The method includes the following steps. One or more surfaces of the substrate are coated with a thiol-reactive compound. The substrate is contacted with carbon nanotube-polymer assemblies dispersed in a solvent, wherein the carbon nanotube-polymer assemblies include the carbon nanotubes wrapped in a polymer having side chains with thiol groups. Wherein by way of the step of contacting the substrate with the carbon nanotube-polymer assemblies, the carbon nanotube-polymer assemblies selectively bind to the surfaces of the substrate based on an interaction between the thiol groups in the polymer and the thiol-reactive compound on the surfaces of the substrate and thereby self-assemble on the substrate.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a continuation of U.S. application Ser. No.13/912,417 filed on Jun. 7, 2013, the disclosure of which isincorporated by reference herein.

FIELD OF THE INVENTION

The present invention relates to carbon nanotube (CNT) depositionprocesses and more particularly, to techniques for CNT solubilizationand surface-selective deposition via polymer-mediated assembly usingpolymers having (e.g., thiol side chains).

BACKGROUND OF THE INVENTION

Carbon nanotubes (CNTs) are promising candidates for many differentapplications such as sensors, supercapacitors, electrodes,drug-delivery, batteries, transparent electrodes, photovoltaic cells,digital logic (field effect transistors (FETs) and thin film transistors(TFTs)). However, one factor limiting the widespread application of CNTsis that many of these applications would require the selectivedeposition of a monolayer or just a few layers of CNTs from solutiononto specific areas of a substrate without covering the whole substratewith a blanket film of CNTs.

Techniques have been proposed for selective deposition of CNTs onto asubstrate. See, for example, Park et al., “High-density integration ofcarbon nanotubes via chemical self-assembly,” Nature Nanotechnology, 7,787-791 (October 2012), the entire contents of which are incorporated byreference herein. See also, U.S. Patent Application Publication Number2013/0082233 A1, filed by Afzali-Ardakani et al., entitled “SelectivePlacement of Carbon Nanotubes Via Coulombic Attraction of OppositelyCharged Carbon Nanotubes and Self-Assembled Monolayers” (hereinafter“U.S. Patent Application Publication Number 2013/0082233”) the entirecontents of which are incorporated by reference herein. With theseconventional processes there are, however, some notable drawbacks. Forexample, low densities of carbon nanotubes are observed after thedeposition, the CNTs cannot be deposited over large areas, there is alack of specificity on the interaction with the surface which leads touncontrolled CNT deposition everywhere in the substrate, not just in theareas of interest, and there is a lack of stability of the CNTdispersion, which makes storage and use of these solutions difficult.

Therefore, improved techniques for effective, surface-selectivedeposition of CNTs would be desirable.

SUMMARY OF THE INVENTION

The present invention provides techniques for carbon nanotube (CNT)solubilization and surface-selective deposition via polymer-mediatedassembly. In one aspect of the invention, a method for self-assembly ofcarbon nanotubes on a substrate is provided. The method includes theflowing steps. One or more surfaces of the substrate are coated with athiol-reactive compound. The substrate is contacted with carbonnanotube-polymer assemblies dispersed in a solvent, wherein the carbonnanotube-polymer assemblies include the carbon nanotubes wrapped in apolymer having side chains with thiol groups. Wherein by way of the stepof contacting the substrate with the carbon nanotube-polymer assemblies,the carbon nanotube-polymer assemblies selectively bind to the surfacesof the substrate based on an interaction between the thiol groups in thepolymer and the thiol-reactive compound on the surfaces of the substrateand thereby self-assemble on the substrate.

In another aspect of the invention, a structure is provided havingcarbon nanotubes on a substrate, wherein one or more surfaces of thesubstrate are coated with a thiol-reactive compound, and wherein thecarbon nanotubes are wrapped in a polymer so as to form carbonnanotube-polymer assemblies, the polymer having side chains with thiolgroups, and wherein the carbon nanotube-polymer assemblies areselectively bound to the substrate based on an interaction between thethiol groups in the polymer and the thiol-reactive compound on thesurfaces of the substrate.

A more complete understanding of the present invention, as well asfurther features and advantages of the present invention, will beobtained by reference to the following detailed description anddrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram illustrating the present polymer-mediateddirected self-assembly process according to an embodiment of the presentinvention;

FIG. 2A is a diagram illustrating a regioregular polythiophene withthiol groups according to an embodiment of the present invention;

FIG. 2B is a diagram illustrating a regioregular polythiophene withthiol group precursors according to an embodiment of the presentinvention;

FIG. 3 is a diagram illustrating synthesis of poly(thiophene)s withfunctional side-chains bearing thiol groups from a parentpoly(thiophene) polymer with alkylbromide side-chains according to anembodiment of the present invention;

FIG. 4 is a diagram illustrating an exemplary methodology forself-assembly of carbon nanotubes (CNTs) on a substrate usingsurface-selective deposition of the CNTs via polymer-mediated assemblyaccording to an embodiment of the present invention;

FIG. 5 is a schematic diagram illustrating the interaction of theCNT/polymer assemblies (bearing thiol groups in the polymer side chains)with a metal surface(s) of the substrate according to an embodiment ofthe present invention;

FIG. 6 is a schematic diagram illustrating the interaction of theCNT/polymer assemblies (bearing thiol groups in the polymer side chains)with a surface(s) of the substrate coated with a monolayer bearingmaleimide moieties according to an embodiment of the present invention;

FIG. 7 is a schematic diagram illustrating the selective interaction ofthe (thiol bearing) CNT/polymer assemblies with metal surfaces of asubstrate according to an embodiment of the present invention;

FIG. 8A is a scanning electron micrograph (SEM) image of the presentCNT/polymer assemblies deposited on an untreated gold surface whereinethanolamine was used for the thiol generation according to anembodiment of the present invention;

FIG. 8B is an SEM image of the present CNT/polymer assemblies depositedon an untreated gold surface wherein pyridine was used for the thiolgeneration according to an embodiment of the present invention;

FIG. 8C is an SEM image of the present CNT/polymer assemblies depositedon an untreated gold surface wherein triethylamine was used for thethiol generation according to an embodiment of the present invention;

FIG. 9 is a scanning electron micrograph (SEM) image of patternedsubstrates of gold (Au) dots on hafnium oxide (HfO₂) after(polymer-mediated) directed self-assembly of carbon nanotube(CNT)/polymer assemblies according to an embodiment of the presentinvention;

FIG. 10 is a magnified view of the image of FIG. 9 showing how the Auareas of the substrate are covered with CNTs according to an embodimentof the present invention;

FIG. 11 is a magnified view of the image of FIG. 9 showing how the HfO₂areas of the substrate have no CNTs according to an embodiment of thepresent invention

FIG. 12 is an SEM image showing the selective deposition of theCNT/polymer assemblies on Au/HfO₂ patterned substrates according to anembodiment of the present invention;

FIG. 13 is a magnified view of the image of FIG. 12 showing the detailof the gold areas according to an embodiment of the present invention;

FIG. 14 is a diagram illustrating an exemplary process for the synthesisof poly(thiophene)s with alkylbromide side-chains according to anembodiment of the present invention; and

FIG. 15 is a diagram illustrating an exemplary process for the synthesisof poly(3-hexylthiolacetate thiophene according to an embodiment of thepresent invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Provided herein are techniques for the selective deposition of thinfilms of carbon nanotubes (CNTs) on specific surfaces using onpolymer-mediated directed self-assembly. An exemplary polymer presentedherein contains thiol groups on its side chains, and thereby caninteract with select surfaces of a substrate via ligand-metal and/orcovalent interactions between the side chains and the substrate surface.

With the present techniques, a CNT/polymer combination can be used forCNT deposition and further device fabrication. The polymer has abackbone capable of binding strongly to the surface of the CNTs. Thepolymer also has side chains with thiol groups which can serve toprovide selective interaction with certain substrate via ligand-metaland/or covalent interactions. See FIG. 1.

FIG. 1 is a schematic diagram illustrating the present polymer-mediateddirected self-assembly process. As shown in FIG. 1, in this example, thepolymer-mediated assembly employs a polymer with thiol groups on itsside chains. For instance as shown in FIG. 1, the present polymer 102with thiol groups on its side chains 104 a and a backbone 104 b capableof wrapping around CNTs 106 to form CNT/polymer assemblies 108.

A substrate 110 is provided having specific areas 112 that areconfigured to interact with the thiol groups on the side chains 104 a ofthe polymer 102. By way of example only, these specific areas 112 of thesubstrate can be coated with a metal, such that a ligand-metalinteraction between the thiol groups and the metal will mediate theassembly of the CNT/polymer assemblies 108 on the substrate.Nanoparticles or any other nanostructures of specific materials capableof interacting with the aforementioned polymer can also be coated withCNTs using this technique.

Once the CNT/polymer assemblies 108 are deposited onto the specificareas 112 of the substrate 110, the CNT/polymer assemblies 108 willself-assemble on the substrate (mediated by the polymer)—thus leading toselective deposition of the CNTs on only desired portions of thesubstrate. Once the CNTs have been (selectively) deposited onto thesubstrate, the polymer can be removed, if so desired. The polymer can beremoved using thermal annealing, effectively leaving behind only theCNTs on the desired parts of the substrate (see FIG. 1). For example, ifthe substrate with the assembled CNTs is heated up to elevatedtemperatures (e.g., greater than about 400° C.), the polymer degradesinto volatile organic molecules, leaving only the CNTs behind withoutdisrupting the optical and electronic properties of the CNTs. RegularCMOS fabrication steps can then follow to complete device fabrication.

As will be described in detail below, these functional polymers are usedto disperse the CNTs, and modular modifications on the chemicalstructure of the polymer's side-chain have a large impact on the surfaceproperties of the polymer-coated CNTs. These slight chemicalmodifications highly influence CNT solubility and enablesurface-selective CNT deposition from solution using directedself-assembly based on metal-ligand/covalent bond interactions involvingthe thiol groups on the side-chain of the polymer.

According to an exemplary embodiment, the polymer is a regioregularpolythiophene 202 with thiol groups or thiol group precursors (i.e.,protected/masked thiol groups) on the side chains. See FIGS. 2A-B. FIG.2A is a diagram illustrating a regioregular polythiophene with thiolgroups and FIG. 2B is a diagram illustrating a regioregularpolythiophene with thiol group precursors. As is known in the art,functional groups like thiols can be protected (one could also saymasked, transformed, etc.) into a different functional group in order toavoid undesired reactions, such as thiol-thiol reaction and disulfideformation. A possible example would be to have the thiol be athioester:) —S—CO—R, which can then be hydrolized to produce a thiol ondemand.

Polymers 202 a/b are capable of interacting with the walls of the CNTsand with an organic solvent, effectively bringing them into solution.The dispersion of the polymer-coated CNTs is stable over time and highconcentrations of CNTs of from about 0.1 milligrams per milliliter toabout 20 milligrams per milliliter can be achieved this way.

The backbone of poly(thiophene)s can wrap around the surface of CNTs viapi-pi stacking by way of the extended aromatic system of thiophenerings, effectively decorating the CNT surface with the functional groupson the poly(thiophene) side-chain without disrupting the optical andelectronic properties of the CNTs. For a description of pi-pi stackingsee, for example, Gu et al., “Fabrication of Free-standing, Conductive,and Transparent Carbon Nanotube Films,” Adv. Mater., 20, 4433-4437(October 2008), the entire contents of which are incorporated byreference herein.

In one exemplary implementation of the present techniques,poly(thiophene)s with thiol groups on the side chains were synthesizedfrom a parent poly(thiophene) polymer 306 with alkylbromide side-chains.See FIG. 3. As shown in FIG. 3, this parent poly(thiophene) polymer 306was synthesized from the corresponding2,5-dibromo-3-(6-bromohexyl)thiophene monomer 304 using Grignardmetathesis (GRIM) polymerization for the synthesis of substitutedregioregular poly(thiophene)s. See, for example, R. D. McCullough etal., “Enhanced electrical conductivity in regioselectively synthesizedpoly(3-alkylthiophenes),” J. Chem. Soc., Chem. Commun., 70-72 (January1992); R. S. Loewe et al., “A Simple Method to Prepare Head-to-TailCoupled, Regioregular Poly(3-alkylthiophenes) Using GrignardMetathesis,” Adv. Mater., 11, 250-253 (March 1999); R. S. Loewe et al.,“Regioregular, Head-to-Tail Coupled Poly(3-alkylthiophenes) Made Easy bythe GRIM Method: Investigation of the Reaction and the Origin ofRegioselectivity,” Macromolecules, 34, 4324-4333 (May 2001); J. M. Lobezet al., “Improving the Performance of P3HT-Fullerene Solar Cells withSide-Chain-Functionalized Poly(thiophene) Additives: A New Paradigm forPolymer Design,” ACS Nano, 6, 3044-3056 (February 2012). The entirecontents of each of the foregoing references are incorporated byreference herein.

The desired functional groups were incorporated by post-polymerizationmodifications using a nucleophilic substitution reaction, which is amodular approach for introducing a wide variety of chemical moietiesinto the side-chains of conjugated polymers. See L. Zhai et al., “ASimple Method to Generate Side-Chain Derivatives of RegioregularPolythiophene via the GRIM Metathesis and Post-polymerizationFunctionalization,” Macromolecules, 2003 36, 61-64 (Published December2002), the entire contents of which are incorporated by referenceherein. In order to obtain a poly(thiophene) 202 a decorated with thiolsin the side chain, polymer 306 was reacted with sodium thioacetate. Theresulting polymer with thioester side-chains 308, which is soluble inorganic solvents, could be hydrolyzed with an organic base such asethanolamine in tetrahydrofuran (THF) to yield the free thiol functionalgroups in the polymer side chain.

FIG. 4 is a diagram illustrating an exemplary methodology 400 forself-assembly of CNTs on a substrate using surface-selective depositionof CNTs via polymer-mediated assembly. In step 402, the above-describedfunctionalized polymer (e.g., regioregular polythiophene with thiolgroups in the side chains synthesized as described above) is dispersedin a solvent. Suitable solvents include, but are not limited to, THF,chloroform (CHCl₃), dimethylformamide (DMF), and N-methyl-2-pyrrolidone(NMP). Sonication may be used to help in the dispersion.

Next, in step 404, CNTs (e.g., single-walled carbon nanotubes (SWCNTs))are contacted with the polymer dispersion (from step 402). For example,the CNTs can be added to the polymer dispersion and sonication used toaid in mixing. As described above, the present functional polymers havecharged side chains and a backbone capable of wrapping around CNTs (viapi-pi stacking) to form CNT/polymer assemblies. Thus these CNT/polymerassemblies are formed in step 404, dispersed in the solvent.

According to an exemplary implementation of the present techniques,dispersions of SWCNTs in organic solvents are obtained using theprotected thioacetate analog of the polymer (e.g., polymer 202 b—seeFIG. 2B and description above) using an analogue procedure. Polymer 308,the thioacetate precursor of polymer 202 a can be used for CNTdispersion instead of the thiol for stability purposes and hydrolyzed insitu at the moment of CNT deposition by directed self-assembly. TheCNT/polymer assemblies prepared in this manner are soluble in organicsolvents such as THF and CHCl₃.

As highlighted above, a goal of the present process is thesurface-selective, polymer-mediated assembly of the CNTs on the surfaceof a given substrate. This is based on complementary interactionsbetween the thiol groups in the side chains and the surface of thesubstrate, e.g., a metal-ligand interaction between the thiol groups anda metal surface(s) of the substrate or a reaction of the thiol groupswith a group on the surface of the substrate to form a covalent bond,see below. Thus, in step 406, the substrate is processed to create oneor more surfaces having a material thereon which is configured tointeract with the functional groups in the side chains of the polymer.It is on these surfaces that self-assembly of the CNTs is desired. It isnoted, that while the instant example is directed to depositing the CNTsonly on selected parts of the substrate, it is also true that thepresent method can be used to deposit blanket films of the CNTs all overthe substrate if so desired. It is also notable that the steps ofmethodology 400 do not need to be performed in the order depicted inFIG. 4. For instance, processing of the substrate may be performed priorto, or concurrently with, the CNT and polymer preparations.

In the case where thiol functional groups are used in the polymers,processing of the substrate includes forming a layer of a thiol-reactivecompound on the surfaces of the substrate on which self-assembly of theCNTs is desired. The term “thiol-reactive” as used herein indicates thatwhen brought in contact with the thiol-bearing polymers, the compoundwill react/interact with the thiol groups (e.g., by metal-ligand,covalent bond, etc.). See below.

As provided above, the interaction employed for the self-assembly of theCNT/polymer assemblies on the substrate may be a metal-ligandinteraction. In that case, the surface(s) of the substrate on whichdeposition of the CNTs is desired (which may include selective areas ofthe substrate, or alternatively an entire surface of the substrate) maybe coated with one or more layers of a metal(s) (i.e., thethiol-reactive compound in this example is a metal(s)). Suitablethiol-reactive metals include, but are not limited to, gold (Au), silver(Ag), copper (Cu), palladium (Pd), platinum (Pt), iron (Fe), tungsten(W), cobalt (Co), rhodium (Rh), iridium (Ir), nickel (Ni), zinc (Zn),cadmium (Cd) or alloys containing at least one the foregoing metals, orany other metal or alloy capable of interacting with thiols. Manytransition metals form bonds with thiols and sulfur-containing compoundsand this interaction is stronger when the metal is capable of softmetal-ligand interactions. By way of example only, a layer of the metalhaving a thickness of from about 1 nm to about 500 μm can be formed, forexample, using plating, evaporation, sputtering, etc., on those surfacesof the substrate on which deposition of the CNTs is desired.

For instance, the metal can be deposited onto the substrate, and then(if so desired) patterned using conventional lithography and etchingtechniques such that the metal remains on only select areas of thesubstrate. Another option is to deposit the metal using a patternedmask, so that the metal is deposited only on specific areas of thesubstrate. For instance, a lift-off technique can be employed whereinthe patterned mask (and with it any extra metal) can be removed, leavingmetal in the desired areas.

Via their thiol functionalized side chains, the CNT/polymer assemblieswhen contacted with the substrate (see below), will (selectively)interact with the metal surface(s) and thereby selective deposition ofthe CNTs on those metal surfaces can be achieved. In this example,according to step 406, the processing of the substrate (i.e., so as tocreate a metal surface(s) of the substrate which will interact with thepolymer side chains via metal-ligand interactions) can be carried out bypatterning a metal(s) on the surface of the substrate—as describedabove.

Alternatively, the interaction employed for the self-assembly of theCNT/polymer assemblies on the substrate may be an interaction betweenthe functional (e.g., thiol) groups in the polymer side chains andfunctional groups on the substrate, such that a covalent bond is formedbetween the functional groups. By way of example only, one or moresurfaces (or the entire surface) of the substrate may be functionalizedwith a monolayer of maleimide-bearing molecules (i.e., thethiol-reactive compound in this case includes a maleimide). A maleimideimide will interact with a thiol forming a covalent bond between thegroups.

Further, the present techniques can leverage the fact that certaincompounds, such as hydroxamic acid, selectively interact with certainmaterials over silicon dioxide. See, for example, J. P. Folkers et al.,“Self-assembled monolayers of long-chain hydroxamic acids on the nativeoxides of metals,” Langmuir, 11, 813-824 (March 1995), and H. Park etal., “High-density integration of carbon nanotubes via chemicalself-assembly,” Nature Nanotech., 7, 787-791 (October 2012). The entirecontents of each of the foregoing references are incorporated byreference herein. See also, U.S. Patent Application Publication Number2013/0082233 which describes an exemplary process for decorating asurface of a substrate with a charge. In one exemplary embodiment, themonolayer includes a positively charged pyridinium salt bearing ahydroxamic acid moiety, NMPI (4-(Nhydroxycarboxamido)-1-methylpyridiniumiodide).

Hydroxamic acids and phosphonic acids selectively bind to surfaces whichare relatively basic, but they do not bind to surfaces which are moreacidic. This can be thought of as an acid/base reaction. For instance,hafnium oxide is relatively basic, so hydroxamic/phosphonic acid bindsto it, and silicon dioxide is relatively acidic, sohydroxamic/phosphonic acid does not bind to it. Other examples ofsurfaces to which hydroxamic acids and phosphonic acids bind(selectively over binding to silicon dioxide) are silicon nitride andaluminum oxide.

It is believed that surfaces with an isoelectric point greater than thepKa of the acid (hydroxamic, phosphonic) used for the self-assembly willgive better directed self-assembly in general, due to deprotonation ofthe acid. See, for example, Folkers et al., “Self-Assembled Monolayersof Long-Chain Hydroxamic Acids on the Native Oxides of Metals,”Langmuir, 11, 813-824 (March 1995), the entire contents of which areincorporated by reference herein. This is true for silicon nitride,aluminum oxide, hafnium oxide. Conversely, surfaces with an isoelectricpoint less than the pKa of the acid (hydroxamic, phosphonic) used forthe self-assembly will give worse/no directed self-assembly. This istrue for silicon dioxide.

Thus, in general, according to the present techniques—those surfaces forwhich self-assembly of the monolayer is desired will be formed from amaterial having an isoelectric point greater than the pKa of the acid(hydroxamic, phosphonic) used for the self-assembly, and those surfacesfor which self-assembly of the monolayer is not desired will be formedfrom a material having an isoelectric point that is less than the pKa ofthe acid. Non-limiting examples include hafnium oxide and silicondioxide, respectively.

Thus when hydroxamic acid is used for the self-assembly, the startingwafer can be, for example, a semiconductor wafer having a layer of afirst material with an isoelectric point that is less than the pKa ofhydroxamic acid, such as SiO₂. A patterned layer of a second materialwith an isoelectric point that is greater than the pKa of hydroxamicacid, such as silicon nitride, HfO₂ and/or aluminum oxide (Al₂O₃), canbe formed on the first material using conventional lithography andetching techniques. As noted above, it may be instead desired to coverthe entire surface of the substrate (as opposed to selective areas) withthe CNTs, in which case, the whole surface of the substrate would bedecorated with the second material. Basically, the second materialshould be present anywhere on the substrate where deposition of the CNTsis desired.

Namely, the pattern of the second material will dictate where on thesurface of the wafer the CNTs will be present since, 1) the monolayer(e.g., bearing maleimide imide functional groups) will interact with thesecond material (and not the first material) on the wafer, and 2) theCNT/polymer assemblies will self-assemble on the monolayer based oncovalent bond interactions between the functional groups in the polymerside chains and the functional groups in the monolayer. In this example,according to step 406, the processing of the substrate (i.e., so as tocreate a monolayer on a surface(s) thereof configured to interact withthe polymer side chains) can be carried out by contacting the patternedsubstrate (prepared as described above) with a compound (e.g., immersingthe substrate in a solution of the compound or drop casting the solutionon the substrate) containing i) a phosphonic acid or a hydroxamic acid(that binds to the second material selectively—see above) and ii) amaleimide, effectively generating a layer of a maleimide-containingcompound only on the second material of the substrate.

The interaction between the functionalized CNT/polymer assemblies andthe processed surface(s) of the substrate are illustrated schematicallyin FIGS. 5 and 6. Specifically, FIG. 5 is a schematic diagramillustrating the interaction of the CNT/polymer assemblies (bearingthiol groups in the polymer side chains) with a metal surface(s) of thesubstrate. FIG. 6 is a schematic diagram illustrating the interaction ofthe CNT/polymer assemblies (bearing thiol groups in the polymer sidechains) with a surface(s) of the substrate coated with a monolayerbearing maleimide moieties.

FIG. 7 is a schematic diagram illustrating the selective interaction ofthe (thiol bearing) CNT/polymer assemblies with metal surfaces of asubstrate. The example shown in FIG. 7 is that of a substrate having apatterned gold (Au) layer over a (non-metal) HfO₂ layer produced usingthe above-described process. As shown in FIG. 7, the CNT/polymerassemblies react with the Au-covered surfaces of the substrate and donot interact with the non-metal surfaces of the substrate. Although notshown, the interaction between the CNT/polymer assemblies and aprocessed substrate having a monolayer of compound bearing (e.g.,maleimide) functional groups would proceed in the same manner as thatshown in FIG. 7. Namely, the (thiol bearing) CNT/polymer assemblieswould react with the surfaces of the substrate coated with the monolayer(e.g., wherein covalent bonds would form between the thiol groups andthe maleimide moieties) and would not react with the (e.g., SiO₂—seeabove) surfaces not coated with the monolayer.

Referring back to FIG. 4, in step 408, the processed(metal/monolayer-coated) substrate is then exposed to the solution ofCNT/polymer assemblies prepared as described above. By way of exampleonly, the solution of the CNT/polymer assemblies can be deposited ontothe substrate, followed by a rinse to remove excess solution. As aresult of the interaction of the thiol groups in side chains of theCNT/polymer assemblies with the processed (metal/monolayer-coated)surfaces of the substrate, the CNTs will self-assemble on the surface ofthe substrate forming a (self-assembled) layer of CNTs or an array ofindividual CNTs on the substrate. In the example provided above, theCNT/polymer assemblies (bearing thiol groups in their side chains) willself-assemble on the metal/monolayer-coated surfaces of the patternedsubstrate forming a CNT layer/array. The final CNT layer/array willinclude the CNT/polymer assemblies, unless (as described above) thepolymer is removed. Any remaining solvent can be removed by drying thesubstrates with a stream of air or nitrogen.

As highlighted above, the present process can be implemented to form alayer of CNTs or an array of individual CNTs on a substrate. When formedas a layer, the CNTs are not regularly aligned, and overlap and/orcontact one another. By contrast, in an array, the CNTs are regularlyaligned, and do not overlap or contact one another. An array ofindividual CNTs may be preferable when devices are being fabricatedwhich require individual CNTs to form the device. For instance, when thedevice features that are capable of interacting with the CNTsspecifically are small enough (in the order of magnitude of about 100nanometers or less), only one CNT fits inside the feature. Afterdeposition of an array of individual CNTs, regular electrode depositionsteps used for CMOS fabrication can be used to obtain transistors ofeach individual CNT in the array. There are instances in which obtainingan array of those individually placed CNTs would be advantageous, forinstance if one wants to fabricate arrays of transistors of individualCNTs. This is interesting for digital logic applications based on CNTs.

Whether a layer of CNTs or an array of individual CNTs is formed on thesubstrate can be regulated by tailoring the above-described process. Forinstance, to attain an array of individual CNTs (as opposed to a layer),the substrate surface modifications (described above) can be configuredsuch that the features are small enough that only a fraction of the CNTsinteracts. Additionally, the carbon nanotube-polymer assembly dispersioncan be diluted (e.g., with additional solvent) to reduce the number ofCNTs deposited on a given area of the substrate. These techniques can beemployed individually, or in combination with one another.

A process for surface-selective polymer-mediated assembly of CNTs viaelectrostatic interactions between charged functional groups on thepolymer and charged surfaces of a substrate are described, for example,in U.S. patent application Ser. No. 13/912,403, filed on Jun. 7, 2013,entitled “Surface-Selective Carbon Nanotube Deposition ViaPolymer-Mediated Assembly,” the entire contents of which areincorporated by reference herein.

The present techniques have the following advantages: (1) high densityplacement of tens of CNTs per square micrometer can be observed usingthis technique—good coverage is usually necessary for the applicationsdescribed above; (2) the CNTs can be deposited over large macroscopicareas of several centimeters to meters of a material with any shape orroughness, which increases the number of possible use cases for thistechnology—nanoparticles can also be coated with CNTs using thisapproach; (3) the interaction used for the deposition of the CNTs isspecific, which means that some areas of the substrate can be coatedwith CNTs while other areas are not; (4) the chemical modification ofthe CNT surface by polymer-wrapping used for directed self-assembly ofthe carbon nanotubes can also be used to create stable dispersions ofthe nanotubes in organic solvents—unmodified carbon nanotubes tend toaggregate and come out of solution, which makes manipulation andfabrication using CNTs difficult; (5) the mechanism of interaction forthe self-assembly does not rely on electrostatic interactions, which isadvantageous when working at smaller feature-size regimes whererepulsion between similarly charged compounds might arise; and (6) thethiol groups on the side-chain of the polymer used for the self-assemblycan be protected for improved long-term stability of the CNT dispersionsand to prevent undesired reaction with unwanted substrates.

The following non-limiting example illustrates the above-describedprocess for functionalizing the surface of a substrate andpolymer-mediated assembly of the CNT/polymer assemblies on thefunctionalized substrate in accordance with the present techniques. Inthis example, the substrates employed included both metal-coated (see,for example, FIG. 7, described above) and (e.g., HfO₂) substrates notcoated with a metal. Thus, in this example, a directed self-assemblystrategy using the present (thiol group-bearing) CNT/polymer assembliesbased on metal-ligand interactions was studied. The assembly on goldsubstrates was studied using CNT dispersions in THF with polymer 308,the thioacetate precursor of polymer 202 a to avoid stability issues. Abase was added to these dispersions in the presence of the substrate toinduce in-situ thioester hydrolysis and thiol formation during thedeposition. Different bases were tested for this purpose: ethanolamine,triethylamine and pyridine. Thioester hydrolysis occurred faster whenusing ethanolamine as evidenced by the fact that after 2 hours ofdeposition in the presence of this base, the highest density of CNTs onthe gold surface could be observed for all 3 bases.

See, for example, FIGS. 8A-C. FIGS. 8A-C are SEM images of the presentCNT/polymer assemblies deposited on an untreated gold surface usingdifferent bases for thiol generation. Specifically, FIG. 8A is an SEMimage of the present CNT/polymer assemblies deposited on an untreatedgold surface wherein ethanolamine was used for the thiol generation.FIG. 8B is an SEM image of the present CNT/polymer assemblies depositedon an untreated gold surface wherein pyridine was used for the thiolgeneration. FIG. 8C is an SEM image of the present CNT/polymerassemblies deposited on an untreated gold surface wherein triethylaminewas used for the thiol generation. CNTs are indicated with an arrow ineach of the images. The scale bar at the bottom left of the images shownin FIGS. 8A-C equals 1 micrometer.

In order to study the selectivity and efficiency of this directedself-assembly, plasma-cleaned HfO₂ substrates patterned with gold dotswere used for the self-assembly. The substrates were configured in themanner shown in FIG. 7, described above. The directed self-assembly ofthe present CNT/polymer assemblies was observed selectively only on theareas of the substrate covered with gold (see FIG. 9), where the CNTdensity was very high as evidenced by scanning electron micrograph (SEM)(see FIG. 10).

FIG. 9 is an SEM image of patterned substrates of gold (Au) dots on HfO₂after directed self-assembly of the present CNT/polymer assemblies. Thescale bar at the bottom left of the image equals 200 micrometers. Amagnified view of the (CNT-covered) Au areas of the wafer is shown inFIG. 10 and a magnified view of the HfO₂ areas with no CNT is shown inFIG. 11.

As shown in FIG. 10, areas with CNTs have a texture and CNTs areindicated by an arrow. The scale bar at the bottom left of the imagesshown in FIGS. 10 and 11 equals 100 nanometers. All of the SEM imageswere taken at 1 kilovolt.

When plasma cleaning of the substrates was not performed prior to thedeposition, the density of CNTs being deposited on the gold patterns wasmuch lower, even though the selectivity was still really high. See, forexample, FIG. 12 and FIG. 13. FIG. 12 is an SEM image showing theselective deposition of the CNT/polymer assemblies on Au/HfO₂ patternedsubstrates. The dotted curve in the figure indicates the boundary forthe Au dot. FIG. 13 is an SEM image showing a detail of the gold areas.

This shows the importance of surface cleaning and treatment forself-assembly purposes. When no base was added to induce the thioesterhydrolysis during the self-assembly, CNT deposition occurred with verylow CNT density and no selectivity, and the CNTs were easily detached bysonication. This is explained by the fact that in this latter case therewas no thiol-gold interaction to direct the self-assembly and to keepthe CNTs on the surface.

The present techniques are further illustrated by way of reference tothe following non-limiting example:

Instruments:

NMR spectra were obtained on a Bruker Avance (400 MHz). NMR chemicalshifts are given in ppm referenced to CHCl₃/TMS (7.24 ppm for ¹H).Polymer molecular weights were determined at room temperature on aWaters 2695 GPC system in THF at 1.0 mL/min (1 mg/mL sampleconcentrations), approximate molecular weights were estimated using apolystyrene calibration standard. Scanning Electron Microscopy (SEM)images were obtained using a LEO 1560 at 1 keV, 20 μm aperture.Substrates were cleaned with a plasma cleaner from Harrick Plasma, modelPDC-32G. MiliQ water was obtained using a Q-Pod from Milipore. The probesonicator used for these experiments was a SONICS from Vibra Cell. CNTbundles were removed by centrifugation using an IEC Centra CL2.

Self-Assembly of CNT/Polymer Assemblies from THF:

For the deposition of CNTs wrapped in polymer 202 a, 3 milligrams of thethioester version of polymer 202 a were dissolved in 10 milliliters THF,to which 2 milligrams of CNTs were added. The resulting mixture wassonicated using a probe sonicator for 45 minutes. The CNT dispersion wascentrifuged for 30 minutes to remove CNT bundles and the supernatant wasfiltered through a PTFE filter (0.22 micrometer pore size). The filterwas washed with 100 milliliters of THF to remove excess polymer and theresidue was resonicated into 10 milliliters of THF with a bathsonicator. The CNT dispersion was sonicated using a probe sonicator for45 minutes, followed by centrifugation for 30 minutes to remove CNTbundles. The resulting supernatant was used for the directed selfassembly of the CNTs. A few drops of the corresponding base were addedright before the CNT assembly to deprotect the thiol groups of thepolymer. Patterned substrates of Au on HfO₂ were plasma cleaned for 3minutes and used for the deposition. Exposure of these substrates to theCNT/polymer assembly solution for 2 hours led to the self-assembly ofthin films of CNTs with very high density and selectivity in the Auparts of the substrate.

Polymer Synthesis:

Unless otherwise noted, all reactions were performed in oven-driedglassware, and under an oxygen-free atmosphere of nitrogen.Polymerizations were carried out using standard Schlenk techniques.Anhydrous solvents and all other chemicals were obtained fromSigma-Aldrich and were used as received.2,5-dibromo-3-(6-bromohexyl)thiophene2 and NMPI1 were synthesized aspreviously described in the literature. CNTs (ASP) were obtained fromHanwha Nanotech and used as received.

General Procedure for the Synthesis of Poly(Thiophene)s withAlkylbromide Side-Chains:

An exemplary process for the synthesis of poly(thiophene)s withalkylbromide side-chains is shown in FIG. 14. In this example,regioregular poly(thiophene)s with different degrees of side-chainsubstitution were synthesized from the corresponding2,5-dibromo-3-hexylthiophene and 2,5-dibromo-3-(6-bromohexyl)thiophene1402. To a solution of the appropriate feed ratio of functionalized 1402and unfunctionalized monomer (1 eq) in dry THF was added t-BuMgCl (1.0 Min THF, 1 eq) at room temperature. The reaction mixture was then heatedto 70° C., and after stirring for 2 hours, NidpppCl2 (1.4 mol %)dispersed in 1 milliter dry THF was added via cannula. The reaction wasobserved to immediately turn deep orange and fluorescent yellow. Afterstirring for 12 hours, the resulting polymer was precipitated frommethanol. The resulting dark purple solid was re-dissolved in CHCl3 andre-precipitated in MeOH and dried under vacuum. The resulting polymercontained the same ratio of functionalized to unfunctionalized repeatunits as the initial feed ratio of the two different monomers, asconfirmed by 1H-NMR. For the precursor of the present (thiol group)polymers with bromide side-chains on every repeat unit,poly(3-(6-bromohexylthiophene)) 306 (a=0, b=n), 80% yield. Mn=24K,PDI=1.4, 1H-NMR (CDCl₃, ppm): 1.20-1.80 (bm. 8H), 2.81 (b, 2H), 3.41 (b,2H), 6.96 (bs, 1H). For poly(3-hexylthiophene), (a=n, b=0), 85% yield.Mn=22K, PDI=1.3, 1H-NMR (CDCl3, ppm): 0.80-1.20 (bt. 3H), 1.20-1.42 (m,4H), 1.82 (bt, 2H), 2.81 (t, 2H), 6.96 (bs, 1H).

Synthesis of poly(3-hexylthiolacetate thiophene)

An exemplary process for the synthesis of poly(3-hexylthiolacetatethiophene) is shown in FIG. 15. In this example, 50 milligrams ofpoly(3-(6-bromohexylthiophene)) 306 were dissolved in 5 ml THF. Anexcess of potassium thioacetate (250 milligrams, 10 eq), was added andthe reaction was heated to 70° C. overnight. The solvent was evaporatedand the resulting residue was taken up in chloroform, and precipitatedby addition to an excess of methanol. This procedure was repeated twiceto obtain the desired polymer with a thioacetate ester in theside-chains of every repeat unit, 308 90% yield. Mn=25K, PDI=1.4, 1HNMR(CDCl₃, ppm): 1.20-1.80 (bm, 8H), 2.30 (bs, 3H), 2.80-2.95 (bm, 4H),6.96 (bs, 1H). Treatment with a base rendered the free thiol in theside-chain.

Although illustrative embodiments of the present invention have beendescribed herein, it is to be understood that the invention is notlimited to those precise embodiments, and that various other changes andmodifications may be made by one skilled in the art without departingfrom the scope of the invention.

What is claimed is:
 1. A structure comprising: carbon nanotubes on asubstrate, wherein one or more surfaces of the substrate are coated witha thiol-reactive compound, and wherein the carbon nanotubes are wrappedin a polymer so as to form carbon nanotube-polymer assemblies, thepolymer being a regioregular polythiophene having side chains with thiolgroups, and wherein the carbon nanotube-polymer assemblies areselectively bound to the substrate based on an interaction between thethiol groups in the polymer and the thiol-reactive compound on thesurfaces of the substrate.
 2. The structure of claim 1, wherein thethiol-reactive compound comprises a metal, and wherein the carbonnanotube-polymer assemblies selectively bind to the surfaces of thesubstrate based on a metal-ligand interaction between the thiol groupsin the polymer and the metal.
 3. The structure of claim 2, wherein themetal is selected from the group consisting of: gold, silver, copper,palladium, platinum, iron, tungsten, cobalt, rhodium, iridium, nickel,zinc, cadmium, and alloys containing at least one the foregoing metals.4. A structure comprising: carbon nanotubes on a substrate, wherein oneor more surfaces of the substrate are coated with a thiol-reactivecompound, and wherein the carbon nanotubes are wrapped in a polymer soas to form carbon nanotube-polymer assemblies, the polymer having sidechains with thiol groups, and wherein the carbon nanotube-polymerassemblies are selectively bound to the substrate based on aninteraction between the thiol groups in the polymer and thethiol-reactive compound on the surfaces of the substrate, and whereinthe polymer wraps around the carbon nanotubes via pi-pi stacking.
 5. Astructure comprising: carbon nanotubes on a substrate, wherein one ormore surfaces of the substrate are coated with a thiol-reactivecompound, and wherein the carbon nanotubes are wrapped in a polymer soas to form carbon nanotube-polymer assemblies, the polymer having sidechains with thiol groups, and wherein the carbon nanotube-polymerassemblies are selectively bound to the substrate based on aninteraction between the thiol groups in the polymer and thethiol-reactive compound on the surfaces of the substrate, and whereinthe thiol-reactive compound comprises maleimide moieties, and whereinthe carbon nanotube-polymer assemblies selectively bind to the surfacesof the substrate based on covalent bonds formed between the thiol groupsin the polymer and the maleimide moieties.
 6. The structure of claim 5,wherein the substrate comprises at least one first region comprising atleast one first material and at least one second region comprising atleast one second material, and wherein the thiol-reactive compoundcomprising maleimide moieties is configured to selectively interact withthe second material as opposed to the first material, such that thethiol-reactive compound comprising maleimide moieties is formed only ona surface of the second region of the substrate.
 7. The structure ofclaim 6, wherein the first material comprises silicon dioxide.
 8. Thestructure of claim 6, wherein the second material comprises hafniumoxide.